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AS4C1M16E5-50TI - 5V 1M×16 CMOS DRAM (EDO) x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM

AS4C1M16E5-50TI_3005800.PDF Datasheet

 
Part No. AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS4C1M16E5-45JC AS4C1M16E5-50JC AS4C1M16E5-50TC AS4C1M16E5-60JC AS4C1M16E5-60JI AS4C1M16E5-60TC AS4C1M16E5-45TC
Description 5V 1M×16 CMOS DRAM (EDO)
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM

File Size 461.71K  /  22 Page  

Maker


Alliance Semiconductor Corporation
Integrated Silicon Solution, Inc.
Lattice Semiconductor, Corp.



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Part: AS4C1M16E5-50JC
Maker: ALLANCE
Pack: SOJ42
Stock: 38
Unit price for :
    50: $4.80
  100: $4.56
1000: $4.32

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 Full text search : 5V 1M×16 CMOS DRAM (EDO) x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM


 Related Part Number
PART Description Maker
AS4C1M16E5-50JC AS4C1M16E5-60JC AS4C1M16E5-60JI AS 5V 1M x 16 CMOS DRAM (EDO)
5V 1M】16 CMOS DRAM (EDO)
5V 1M16 CMOS DRAM (EDO)
ALSC[Alliance Semiconductor Corporation]
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
http://
SIEMENS AG
HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
1M X 16 EDO DRAM, 50 ns, PDSO44
1M X 16 EDO DRAM, 60 ns, PDSO44
Hitachi,Ltd.
HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 1M x 16 Bit 1k 5 V 60 ns EDO DRAM
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM
1M x 16 Bit 1k 5 V 50 ns EDO DRAM
-1M x 16-Bit Dynamic RAM 1k Refresh
1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM
1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY 4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns
4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns
4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM
4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
HYB3164165ATL-60 HYB3164165ATL-50 HYB3164165ATL-40 4M x 16 Bit 4k EDO DRAM Low Power
4M x 16 Bit 8k EDO DRAM
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
Q67100-Q3017 HM364035 HYM364035GS-60 HYM364035S HY 4M x 36 Bit EDO DRAM Module with Parity
From old datasheet system
4M x 36-Bit EDO-DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
AS4C14400-70JC AS4C14405-60JC AS4C14405-50TC AS4C1 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 40ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 40ns
Alliance Semiconductor
NN514265A EDO Mode CMOS DRAM
Nippon Steel Semiconductor
HY5118164CSLTC-60 HY5116164CJC-80 1M X 16 EDO DRAM, 60 ns, PDSO44
1M X 16 EDO DRAM, 80 ns, PDSO42
HYNIX SEMICONDUCTOR INC
HM51W16165 HM51W16165J-5 HM51W16165J-6 HM51W16165J 1M X 16 EDO DRAM, 60 ns, PDSO44
16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh
ELPIDA MEMORY INC
 
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